Publications

Group III–V compound semiconductors are used widely in electronic and optoelectronic applications. Of this group of materials, indium antimonide is particularly well suited for use in high-speed devices as it has a small bandgap and the largest room-temperature carrier mobility. Here, a new method for the synthesis of InSb (and related GaSb) is presented that sidesteps many of the problems of current methods, for example, high temperatures, air stability, or general complexity.